Patent · US Active

Unusual high thermal conductivity in boron arsenide bulk crystals

US11975979B2 · kind B2 · utility

0Cited by

2References

27Claims

0Family size

Assignee

University of Houston System · US

Inventors

Zhifeng Ren · Houston, US
Fei Tian · Beijing, CN
Gang Chen · Berkeley Heights, US
Bai Song · Cambridge, US
Ke-Yuan Chen · Taipei, TW
Li-Zhou Shi · Austin, US
Xi Chen · New York, US
Sean Sullivan · Austin, US
David Broido · Needham, US
Navaneetha Krishnan Ravichandran · East Sharon, US

Key dates

Filing date	Jun 20, 2019
Grant date	May 7, 2024
Priority date	—
Expiry date	Apr 7, 2041

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC01P2006/32
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method for growing bulk boron arsenide (BA) crystals, the method comprising utilizing a seeded chemical vapor transport (CVT) growth mechanism to produce single BAs crystals which are used for further CVT growth, wherein a sparsity of nucleation centers is controlled during the further CVT growth. Also disclosed are bulk BAs crystals produced via the method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.