Method for selectively manufacturing material layer and target pattern
US11976364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2021 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Sep 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A material layer manufacturing method is provided. The material layer manufacturing method may comprise the steps of: preparing a substrate having a base pattern formed thereon; providing a first precursor on the substrate having the base pattern formed thereon, in a state where a first voltage is applied to the base pattern; and providing a second precursor on the substrate having the first precursor provided thereon, in a state where a second voltage is applied to the base pattern, to form, on the substrate having the base pattern formed thereon, a material layer resulting from the reaction of the first precursor with the second precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.