Method and system for predicting junction temperature of power semiconductor module in full life cycle, and terminal
US11976984B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2023 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Mar 12, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY04S10/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure belongs to the technical field of power electronic converters, and discloses a method and a system for predicting a junction temperature of a power semiconductor module in the full life cycle and a terminal. The method includes the steps: arranging an NTC thermistor network to monitor the temperature of each area inside the power module when the power module works; obtaining data for training the neural network by utilizing finite element simulation or experiments, and building a neural network model among the temperature of the NTC resistor network, a water flow rate, an aging factor and the junction temperature of the chip under working conditions. The present disclosure improves the junction temperature prediction accuracy of areas with relatively large errors comprehensively and realizes the high-precision junction temperature prediction under all working conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.