Patent · US Active

Sensor and its manufacturing method

US11976989B2 · kind B2 · utility

0Cited by

6References

11Claims

0Family size

Assignee

Picosun Oy · FI

Inventors

Marko PUDAS · Sundsberg, FI
Jani Kivioja · Cambridge, GB
Niku Oksala · Tampere, FI

Key dates

Filing date	Mar 27, 2020
Grant date	May 7, 2024
Priority date	—
Expiry date	Jun 18, 2042

Classification

Technology area (CPC A)Human Necessities
CPC primaryA61B2562/12
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A strain sensor that includes a first atomic layer deposition layer, a flexible molecular layer deposition layer on top of the first atomic layer deposition layer, and a second atomic layer deposition layer on top of the molecular layer deposition layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.