High fiber count undersea cable
US11977267B2 · kind B2 · utility
0Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2022 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Apr 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B11/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include providing a patterned hardmask over a substrate, and providing, from an ion source, a plasma treatment to a first section of the patterned hardmask, wherein a second section of the patterned hardmask does not receive the plasma treatment. The method may further include etching the substrate to form a plurality of fins in the substrate, wherein the first section of the patterned hardmask is etched faster than the second section of the patterned hardmask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.