Defocus measurement method, correction method, and method of manufacturing semiconductor device by using the correction method
US11977338B2 · kind B2 · utility
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5References
20Claims
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Key dates
| Filing date | Jun 7, 2021 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | May 20, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes selecting a diffraction based focus (DBF) mark that is unaffected by a pattern of a lower layer; manufacturing a mask including a mark pattern for forming the DBF mark; forming the DBF mark in a cell region of a wafer by using the mask; measuring the DBF mark and monitoring defocus; correcting the defocus on the basis of a result of the monitoring; and forming a pattern in the cell region of the wafer, after correcting the defocus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.