Substrate for epitaxial growth, method for manufacturing the same, semiconductor device including the same and method for manufacturing semiconductor device
US11978627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2021 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Jun 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate for epitaxial growth includes a central region that has a center of the substrate and that serves as a non-modified region, and a peripheral region that surrounds the central region in a manner to be spaced apart from the center of the substrate by a distance and that serves as a modified region having a plurality of modified points. A method for manufacturing a substrate for epitaxial growth includes providing a substrate and forming a plurality of modified points in an interior of the substrate in position corresponding to the modified region. A semiconductor device including the substrate and a method for manufacturing the semiconductor device are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.