Methods for processing semiconductor structures and methods for forming semiconductor structures
US11978636B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 24, 2021 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Jul 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present application provide a method for processing a semiconductor structure and a method for forming a semiconductor structure. The method for processing a semiconductor structure includes: providing a semiconductor substrate, the semiconductor substrate being provided with a feature portion, the aspect ratio of the feature portion being greater than a preset aspect ratio, a mask layer being provided on the top of the feature portion; ashing a semiconductor structure, the semiconductor structure comprising the semiconductor substrate, the feature portion, and the mask layer; cleaning the semiconductor structure; drying the semiconductor structure; and removing the mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.