Semiconductor device and electrical contact

US11978780B2 · kind B2 · utility

Assignee

• Nexperia B.V. · NL

Inventors

• Tim Böttcher · Nijmegen, NL
• Olrik Schumacher · Hamburg, DE
• Jan Fischer · Lüneburg, DE

Key dates

• Filing date: Dec 16, 2019
• Grant date: May 7, 2024
• Expiry date: Jan 7, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/05655

Abstract

The disclosure relates to an electrical contact structure, and corresponding method of manufacturing an electrical contact structure, for a discrete semiconductor device. The electrical contact includes a first metal layer configured and arranged to contact a strained active area of a semiconductor die, a second metal layer configured and arranged to contact the first metal layer, and a third metal layer configured and arranged to contact the second metal layer.