Multichannel transistor
US11978792B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jan 15, 2014 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Sep 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor (FET) includes a plurality of substantially parallel conductive channels and at least one electrically conducting plug to travers and form an ohmic connection with at least two of the plurality of conductive channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.