Semiconductor device with doped region between gate and drain
US11978797B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 9, 2022 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Aug 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is over a semiconductor substrate. The drift region is in the semiconductor substrate and laterally extends past a first side of the gate structure. The source region is in the semiconductor substrate and adjacent a second side of the gate structure opposite the first side. The drain region is in the drift region. The doped region is in the drift region and between the drain region and the gate structure. From a top view the doped region has a strip pattern extending in parallel with a strip pattern of the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.