Method for enhancing the performance of pentacene organic field-effect transistor and the structure of pentacence organic field-effect transistor

US11980042B2 · kind B2 · utility

Assignee

• Nanjing University · CN

Inventors

• Limin Kang · Nanjing, CN
• Yiru Wang · Nanjing, CN
• Jiang Yin · Montgomery, US
• Yidong Xia · Nanjing, CN
• Zhiguo Liu · Shanghai, CN

Key dates

• Filing date: Jul 29, 2020
• Grant date: May 7, 2024
• Expiry date: Oct 1, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/141

Abstract

A method for enhancing the performance of pentacene organic field-effect transistor (OFET): an n-type semiconductor thin film was set as a buffer layer between pentacene and polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type organic buffer layer is 1˜100 nm. The induced electrons at the interface lead to the reduction of the height of the hole-barrier formed at the interface, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET. The widened distribution region of positive space charges caused by ionized donors in n-type organic buffer layer effectively restricts the back-transfer of holes from polymer to pentacene, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.