Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device
US11981849B2 · kind B2 · utility
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Key dates
| Filing date | Feb 16, 2021 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Nov 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Semiconductor nanoparticles are provided. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. An Ag content is 10 mol % to 30 mol %, a total content of the at least one of In and Ga is 15 mol % to 35 mol %, and an Se content is 35 mol % to 55 mol % in the semiconductor nanoparticles. The semiconductor nanoparticles emit light having an emission spectrum with a peak emission wavelength in a range of 500 nm to 900 nm, and a half bandwidth of 250 meV or less upon irradiation with light in a wavelength range of 350 nm to less than 500 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.