Transparent conductive oxide thin film and use thereof
US11982017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2021 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Jun 21, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for fabricating a transparent conductive oxide thin film, the method comprising the following steps: fabricating Ba1-xLaxSnO3 using a solid-phase reaction method to obtain a BLSO magnetron sputtering target material; and fabricating a BLSO thin film by means of direct deposition with argon as a sputtering gas by using a SrTiO3, MgO, LaAlO3, (La,Sr)(Al,Ta)O3(LSAT), MgAl2O4 or Al2O3 single crystal substrate and the BLSO magnetron sputtering target material, such that the transparent conductive oxide thin film is fabricate is provided. During sputtering, the temperature of the substrate is 750° C.-950° C., and the deposition pressure of the Ar gas is 25-77 Pa. The room-temperature mobility of the transparent conductive oxide thin film can reach 115 cm2/V·s, the room-temperature carrier concentration can reach 1.2×1021 cm−3, and the room-temperature conductivity can reach 14,000 S/cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.