Patent · US Active

Semiconductor device

US11982707B2 · kind B2 · utility

0Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 26, 2022
Grant dateMay 14, 2024
Priority date
Expiry dateJul 26, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K2201/1003
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor device includes an internal circuit connected to at least one pad. A first inductor element is connected between the at least one pad and the internal circuit, a second inductor element coupled to the first inductor element and generating an induced voltage due to an overcurrent flowing in the first inductor element. An event detection circuit includes a monitoring element connected to the second inductor element. The monitoring element is configured to generate an event detection signal by sensing changes in properties of the monitoring element caused by at least one of the induced voltages generated in the second inductor element and a current flowing in the second inductor element. The internal circuit supplies an operating voltage to the event detection circuit, and determines whether an event causing the overcurrent has occurred by receiving the event detection signal from the event detection circuit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.