Patent · US Active

Simulation method for semiconductor fabrication process and method for manufacturing semiconductor device

US11982980B2 · kind B2 · utility

1Cited by
6References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 14, 2021
Grant dateMay 14, 2024
Priority date
Expiry dateMay 11, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/10
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

According to an aspect of the present inventive concept, a simulation method for a semiconductor fabrication process includes obtaining, as input data, process parameters for controlling a semiconductor process of manufacturing semiconductor devices, or design parameters representing a structure of the semiconductor devices, or both the process parameters and the design parameters; generating predictive data for electrical characteristics of the semiconductor devices using a machine learning model based on the input data; generating reference data for the electrical characteristics of the semiconductor devices using a simulation tool based on the input data; and training the machine learning model using the predictive data and the reference data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.