Plasma control device and plasma processing system
US11984297B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2022 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Sep 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.