Heat dissipating substrate for semiconductor and preparation method thereof
US11984326B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 29, 2020 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Jun 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/858
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a heat dissipating substrate and a preparation method thereof, which can form a precise pattern in a thick electrode metal plate and improve insulating strength and peel strength. heat dissipating substrate for semiconductor may include: an electrode metal plate having a plurality of electrode patterns which are electrically insulated from each other by a pattern space formed therebetween; a metal base disposed under the electrode metal plate, and configured to diffuse heat conducted from the electrode metal plate; an insulating layer formed between the electrode metal plate and the metal base; and an insulating material filled portion configured to fill the pattern space and a peripheral portion outside an electrode pattern group composed of the plurality of electrode patterns, and support the electrode patterns while brought in direct contact with side surfaces of the plurality of electrode patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.