Semiconductor device and method of manufacturing the same
US11984444B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2021 |
| Grant date | May 14, 2024 |
| Priority date | — |
| Expiry date | Nov 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first active region extending along a first direction. The semiconductor device also includes a second active region extending along the first direction. The semiconductor device further includes a first gate extending along a second direction perpendicular to the first direction. The first gate has a first segment disposed between the first active region and the second active region. In addition, the semiconductor device includes a first electrical conductor extending along the second direction and across the first active region and the second active region, wherein the first segment of the first gate and the first electrical conductor are partially overlapped to form a first capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.