Light emitting diode structure

US11984530B2 · kind B2 · utility

Assignee

• CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD · CN

Inventor

• Ching-Chung Chen · New Taipei, TW

Key dates

• Filing date: Apr 20, 2021
• Grant date: May 14, 2024
• Expiry date: Aug 28, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A light emitting diode (LED) structure includes a substrate, a first type semiconductor layer, a second type semiconductor layer, and a multi-quantum well light-emitting layer. The first type semiconductor layer is disposed on the substrate and has a patterned structure layer on a surface of the first type semiconductor layer away from the substrate. The multi-quantum well light-emitting layer is sandwiched between the patterned structure layer and the second type semiconductor layer and covers the patterned structure layer. The multi-quantum well light-emitting layer has multiple first thickness regions, multiple second thickness regions, and multiple transition regions. The first thickness region has a thickness greater than the second thickness region in a vertical direction from the first type semiconductor layer to the second type semiconductor layer. The transition region has a thickness that gradually decreases in a direction from the first thickness regions to the second thickness region.