Patent · US Active

Piezoelectric element

US11985899B2 · kind B2 · utility

1Cited by
0References
1Claims
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Key dates

Filing dateDec 1, 2021
Grant dateMay 14, 2024
Priority date
Expiry dateFeb 15, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/8554
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1−dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1αa2)(Zrb1Tib2βb3)Oc, where 0.5<a1/(b1+b2+b3)<1.07.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.