Weak field stimulated skyrmion nucleation and manipulation for spintronic memory and processing devices
US11990170B2 · kind B2 · utility
0Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2022 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Nov 19, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Aspects herein are directed to nucleating skyrmions in spintronic materials by dynamic manipulation of an in-plane magnetic field and related design of prototype devices for spintronic memory and processing. Different from conventional phase transition methods, nucleating and manipulating skyrmion using in-plane fields and spin current pulses is described. For example, in a material with rotatable anisotropy and asymmetry geometric confinement, a skyrmion can be nucleated by switching the in-plane fields. This has been experimentally confirmed in a centrosymmetric magnet, Fe3Sn2, with an engineered thickness gradient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.