Methods and systems for combining x-ray metrology data sets to improve parameter estimation
US11990380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2020 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Jul 31, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B2210/56
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for measuring a complex semiconductor structure based on measurement data before and after a critical process step are presented. In some embodiments, the measurement is based on x-ray scatterometry measurement data. In one aspect, a measurement is based on fitting combined measurement data to a simplified geometric model of the measured structure. In some embodiments, the combined measurement data is determined by subtraction of a measured diffraction pattern before the critical process step from a measured diffraction pattern after the critical process step. In some embodiments, the simplified geometric model includes only the features affected by the critical process step. In another aspect, a measurement is based on a combined data set and a trained signal response metrology (SRM) model. In another aspect, a measurement is based on actual measurement data after the critical process step and simulated measurement data before the critical process step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.