Semiconductor device
US11990460B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 17, 2022 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Mar 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F55/25
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes: a substrate that has a first surface extending in a first direction and a second direction; a first metal oxide semiconductor field effect transistor (MOSFET) that is provided on the first surface of the substrate; a support base that is provided above the first surface of the substrate and extends in a third direction intersecting the first direction and the second direction; a light receiving element that is in contact with a second surface of the support base facing the first direction; and a light emitting element that is in contact with a third surface of the light receiving element facing the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.