Methods of fabricating capacitor and semiconductor device including the capacitor
US11990503B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2021 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Sep 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a method of fabricating a capacitor. The method of fabricating a capacitor may include forming a first electrode, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, and applying, between the first electrode and the second electrode, a voltage outside an operating voltage range applied during operation or a current outside an operating current range applied during operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.