IGBT device
US11990538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2019 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Mar 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
Provided is an insulated gate bipolar transistor (IGBT) device. The IGBT device includes p-type body regions located on a top of an n-type drift region, a first n-type emitter region located within the p-type body region; a first gate structure located over the p-type body region, where the first gate structure includes a first gate dielectric layer, a first gate and an n-type floating gate which are located above the first gate dielectric layer, where the n-type floating gate is located on a side close to the n-type drift region in a lateral direction; an insulating dielectric layer located between the n-type floating gate and the first gate; and one opening in the first gate dielectric layer. The n-type floating gate is in contact with the p-type body region to form a p-n junction diode through the one opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.