Method of manufacturing micro-light emitting diode-based display and micro-light emitting diode-based display
US11990559B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Sep 18, 2020 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | May 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a micro-light emitting diode (LED)-based display, and a micro-LED-based display are provided. The method includes forming a micro-LED partitioned in the unit of a plurality of sub-pixels on a semiconductor substrate, planarizing the micro-LED by forming a planarization layer on at least a portion of the micro-LED, forming a via hole in the planarization layer, and integrating the micro-LED and a thin-film transistor (TFT) for an operation of the sub-pixels by arranging and depositing the TFT on the planarized micro-LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.