Surface acoustic wave resonator structure and method of forming the same, and filter
US11990891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2023 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Apr 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/64
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave resonator structure and a method of forming the resonator structure and a filter are provided. The resonator structure includes: a piezoelectric substrate; an interdigital transducer including a first interdigital electrode structure and a second interdigital electrode structure, wherein the first interdigital electrode structure comprises first interdigital electrodes and a first interdigital electrode lead-out part connected to each other, the second interdigital electrode structure comprises second interdigital electrodes and a second interdigital electrode lead-out part connected to each other, the first interdigital electrodes and the second interdigital electrodes extend along a first direction and are alternately arranged in a second direction; a temperature compensation layer, disposed on a side of the interdigital transducer away from the piezoelectric substrate; and a first protection layer disposed between the interdigital transducer and the temperature compensation layer and configured to protect the interdigital transducer from being oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.