Imaging device and electronic device
US11991438B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2020 |
| Grant date | May 21, 2024 |
| Priority date | — |
| Expiry date | Jan 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80377
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging device capable of executing image processing is provided. An imaging device with low power consumption is provided. A highly reliable imaging device is provided. An imaging device with higher integration degree of pixels is provided. An imaging device manufactured at low cost is provided. The imaging device includes a photoelectric conversion device, a first transistor that is formed in a first layer and includes silicon in a channel formation layer, and a capacitor that is formed in a second layer bonded to the first layer. One of a source and a drain of the first transistor is electrically connected to one of electrodes of the photoelectric conversion device, and the other of the source and the drain of the first transistor is electrically connected to one of electrodes of the capacitor. A pixel having a function of generating first data and a function of multiplying the first data to have a given magnification to generate second data is included. The first data and the second data each have an analog value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.