Passivation of silicon dioxide defects for atomic layer deposition
US11993844B2 · kind B2 · utility
0Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2020 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Apr 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present inventive concept is related to methods for passivating an oxide layer and methods of selectively depositing a metal, metal nitride, metal oxide, or metal silicide layer on a metal, metal oxide, or silicide layer over an oxide layer including exposing the oxide layer to a passivant that selectively binds to the oxide layer over the metal, metal oxide, or silicide layer, and selectively growing the metal, metal nitride, metal oxide or metal silicide layer on the metal, metal oxide or silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.