Semiconductor circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued magnetoelectric spin hall effect
US11996129B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jun 12, 2017 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Jan 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/23
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying structure exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states, wherein the underlying structure includes a piezoelectric material structure and a spin Hall metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.