Method for reading cross point-type memory array including two-terminal switching material
US11996146B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Apr 2, 2020 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Mar 20, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for reading a current for processing analog information in a memory array for a synaptic device. To this end, the present invention provides a method for reading a memory array including a two-terminal switching material, including (a) selecting at least one cell by applying a voltage to the memory array and (b) simultaneously measuring the sum of currents from the at least one cell selected. The voltage applied to the at least one cell selected in operation (a) is higher than a voltage applied to at least one cell not selected while being within a range in which all of the selected at least one cell is not turned on.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.