Thin film transistor and method of manufacturing the same, display substrate, and display device
US11996413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2020 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Aug 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/123
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.