Patent · US Active

Photosensitive element and optoelectronic component

US11996425B2 · kind B2 · utility

0Cited by

1References

17Claims

0Family size

Assignee

First Sensor AG · DE

Inventors

Ruben Chavez · Glendale, US
Martin Wilke · Berlin, DE
Marc Schillgalies · Berlin, DE
Iman Sabri Alirezaei · Berlin, DE
Michael Pierschel · Berlin, DE

Key dates

Filing date	Jan 18, 2023
Grant date	May 28, 2024
Priority date	—
Expiry date	Jan 18, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH10F77/306
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A photosensitive element includes a semiconductor substrate, a light sensitive region formed in the semiconductor substrate, an inactive region at least partly surrounding the light sensitive region, and a protective layer having an opening leaving the light sensitive region uncovered by the protective layer. The protective layer is an anti-reflective coating having in at least a part of a spectral range between 300 nm and 1200 nm a reflectivity of less than 10% and a transmittance of less than 0.1%.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.