Semiconductor device for high voltage applications
US11996441B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Dec 10, 2021 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Jun 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a first region disposed on a substrate, a second region disposed on the first region, a third region disposed in the second region and a first terminal region disposed in the third region. The first region comprises a discontinuous layer including at least one gap portion. The at least one gap portion comprises a portion of the substrate. The first region and the second region have a first conductivity type, and the substrate, the third region and the first terminal region have a second conductivity type. The first conductivity type is different from the second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.