Gate-last ferroelectric field effect transistor and manufacturing method thereof
US11996454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2021 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Oct 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate-last ferroelectric field effect transistor includes a substrate, isolation regions, a gate structure, a side wall spacer, source and drain regions, a first metal silicide layer and an interlayer dielectric layer which are sequentially arranged from bottom to top; the present disclosure further provides a manufacturing method of a gate-last ferroelectric field effect transistor; according to structural characteristics of the gate-last ferroelectric field effect transistor and crystalline characteristics of a hafnium oxide-based ferroelectric film, a dummy gate is first introduced in a manufacturing process of the gate-last ferroelectric field effect transistor; afterwards, high-temperature annealing is performed to make sure that an unannealed hafnium oxide-based film is crystallized to form a ferroelectric phase; finally the dummy gate is removed and a gate electrode layer is deposited to meet performance requirements of the gate-last ferroelectric field effect transistor; and the gate-last ferroelectric field effect transistor has an excellent application prospect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.