Semiconductor device and method of manufacture
US11996474B2 · kind B2 · utility
0Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2019 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | May 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
The present disclosure relates to a bipolar transistor semiconductor device including: a substrate layer, a collector epitaxial layer supported by the substrate layer, a base region supported by a portion of the collector epitaxial layer, and an emitter region supported by a portion of the base region. The emitter region includes a polysilicon material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.