Heterojunction optoelectronic device and method of manufacturing the same
US11997857B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jun 26, 2020 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Sep 15, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.