Ferroelectric thin film
US11999614B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jan 9, 2023 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Jan 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a thin film including Mo1-xWxTe2 stacked in a plurality of layers. The thin film has a thickness of about 1 nm to about 100 nm in a stacking direction, has a symmetric lattice structure at a temperature higher than a threshold temperature, and has an asymmetric lattice structure at a temperature equal to or lower than the threshold temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.