Method for in-situ modification of mercury quantum dots in traditional thermal injection process

US11999888B2 · kind B2 · utility

Assignee

• Shanghai Institute of Technical Physics Chinese Academy of Sciences · CN

Inventors

• Jingjing Liu · Shanghai, CN
• Jianlu Wang · Shanghai, CN
• Tianle Guo · Shanghai, CN
• Xinning Huang · Tuji, CN
• Xiangjian Meng · Shanghai, CN
• Hong Shen · Omaha, US
• Tie Lin · Shanghai, CN
• Junhao Chu · Shanghai, CN

Key dates

• Filing date: Nov 9, 2022
• Grant date: Jun 4, 2024
• Expiry date: Nov 9, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K30/10
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

The present disclosure relates to the field of preparation of compound semiconductor nanomaterials, and in particular to a method for in-situ modification of mercury quantum dots in a traditional thermal injection process. It is characterized in that, in the traditional thermal injection process for synthesis of HgTe quantum dots, after a certain reaction time, a low boiling point polar solvent that is incompatible with a reaction solvent is rapidly injected, so that an interfacial separation of two liquid phases occurs in a mixed reaction, and then a selective crystal oriented surface modification is conducted on surfaces of mercury quantum dots.