Patent · US Active

Memory circuit and memory

US12002503B2 · kind B2 · utility

0Cited by
4References
15Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 21, 2022
Grant dateJun 4, 2024
Priority date
Expiry dateDec 14, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2207/005
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The present disclosure provides a memory circuit and a memory. The memory circuit at least includes a plurality of memory blocks. Each of the memory blocks includes a first memory sub-block, a second memory sub-block, and a third memory sub-block arranged in sequence; the second memory sub-block includes a first memory unit and a second memory unit; the first memory sub-block and the first memory unit are configured to store high-order bytes; the second memory unit and the third memory sub-block are configured to store low-order bytes; and in an arrangement direction of memory sub-blocks, different memory units that are arranged side by side have different block selection addresses.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.