Active matrix substrate
US12002820B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2022 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Jan 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/423
Abstract
An active matrix substrate includes first and second TFTs. The first TFT includes a first lower electrode, a first insulating layer, a first oxide semiconductor layer, and a first gate electrode. The first oxide semiconductor layer includes a first channel region overlapping the first gate electrode when viewed in a normal direction of the substrate. The first lower electrode has a first light-shielding portion overlapping the entire first channel region and including a first metal film. The second TFT includes a second lower electrode, the first insulating layer, a second oxide semiconductor layer, and a second gate electrode. The second oxide semiconductor layer includes a second channel region overlapping the second gate electrode when viewed in the normal direction. The second lower electrode has a light-transmitting portion overlapping the second channel region and including a first transparent conductive film but not a light-shielding metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.