Contact structure for semiconductor device
US12002867B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2021 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Jan 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a layer of dielectric material over the gate structure, a source/drain (S/D) contact layer formed through and adjacent to the gate structure, and a trench conductor layer over and in contact with the S/D contact layer. The S/D contact layer can include a layer of platinum-group metallic material and a silicide layer formed between the substrate and the layer of platinum-group metallic material. A top width of a top portion of the layer of platinum-group metallic material can be greater than or substantially equal to a bottom width of a bottom portion of the layer of platinum-group metallic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.