Semiconductor devices and methods of manufacture
US12002875B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2022 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Dec 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of forming semiconductor devices are described herein. A method includes forming a first fin and a second fin in a substrate. A low concentration source/drain region is epitaxially grown over the first fin and over the second fin. The material of the low concentration region has less than 50% by volume of germanium. A high concentration contact landing region is formed over the low concentration regions. The material of the high concentration contact landing region has at least 50% by volume germanium. The high concentration contact landing region has a thickness of at least 1 nm over a top surface of the low concentration source/drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.