Method for manufacturing solar cell

US12002899B2 · kind B2 · utility

Assignee

• TRINA SOLAR CO., LTD. · CN

Inventors

• Chengfa Liu · Changzhou City, CN
• Hong Chen · Changzhou City, CN
• Daming Chen · Changzhou City, CN
• Yifeng Chen · Taizhou City, CN

Key dates

• Filing date: Nov 2, 2023
• Grant date: Jun 4, 2024
• Expiry date: Nov 2, 2043

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting layer is provided. A doped conducting layer is disposed at least on the first surface and the portion of the first side surface, thereby covering the textured structure. A passivating contact layer is formed on the second surface of the substrate. A first passivation layer is formed on the doped conducting layer. The first passivation layer covers the first surface and at least the portion of the first side surface, thereby covering at least the doped conducting layer. A second passivation layer is formed on the passivating contact layer. The second passivation layer covers the second surface, thereby covering the passivating contact layer.