Semiconductor device and semiconductor component
US12002906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2021 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Aug 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.