Patent · US Active

Multi-layer metallization for multi-channel emitter array

US12003076B2 · kind B2 · utility

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1References
24Claims
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Key dates

Filing dateJul 29, 2020
Grant dateJun 4, 2024
Priority date
Expiry dateMar 18, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for fabricating an array of emitters may include providing a first metallization layer for a first set of emitters of a first channel, wherein the first metallization layer comprises a first interchannel portion positioned between the first set of emitters and a second set of emitters of a second channel. The method may include depositing a dielectric layer on the first interchannel portion of the first metallization layer. The method may include providing a second metallization layer for the second set of emitters, wherein the second metallization layer comprises a second interchannel portion positioned between the first set of emitters and the second set of emitters, and wherein the second interchannel portion of the second metallization layer at least partially overlaps the first interchannel portion of the first metallization layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.