Air-gap type FBAR
US12003228B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Jun 4, 2021 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Oct 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/13
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An air-gap type film bulk acoustic resonator (FBAR) according to the present invention may include: a substrate comprising an air gap portion on an upper surface thereof; a lower electrode formed on the substrate; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a protective layer formed on the upper electrode; and a beam structure extended in a dome shape from one side of the upper electrode to define a space portion between the upper electrode and the piezoelectric layer, wherein one end of the beam structure is in contact with the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.