Display device including thin encapsulation layer containing silicon oxynitride layer
US12004368B2 · kind B2 · utility
0Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2021 |
| Grant date | Jun 4, 2024 |
| Priority date | — |
| Expiry date | Feb 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/361
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A display device includes a light emitting structure disposed on a substrate, and a thin film encapsulation layer disposed on the light emitting structure and including an inorganic layer containing silicon oxynitride and an organic layer. A portion of the inorganic layer has a stress intensity factor of about 1.6 MPa or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.