Field effect transistor sensor and a corresponding array device
US12007356B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jan 26, 2018 |
| Grant date | Jun 11, 2024 |
| Priority date | — |
| Expiry date | Oct 11, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/5438
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A field effect transistor sensor includes: a source-drain channel, a semiconductor layer on said source-drain channel, a first gate electrode arranged above said semiconductor layer, a first well enclosing said source-drain channel, said semiconductor layer and said first gate electrode, the first well being configured to be filled, in use, with a first liquid, particularly a gating electrolyte, a second gate electrode arranged above the first gate electrode and exposed to an interior of the first well. Also disclosed is an array device including an array of field effect transistor sensors according to the above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.